SOURCE: NXP Semiconductors

NXP Semiconductors

June 24, 2010 08:00 ET

NXP Opens High Performance RF Product Creation Center in USA

New Design Center Near Boston Strengthens Support for RF Customers

EINDHOVEN, NETHERLANDS and SAN JOSE, CA--(Marketwire - June 24, 2010) -  NXP Semiconductors today announced the opening of the high performance radio frequency (RF) product creation center (PCC) in Billerica, Massachusetts, U.S.A. This new NXP facility, located near Boston, will focus on the design of RF and Microwave integrated circuits (ICs) used in demanding applications such as defense & aerospace, Industrial, Scientific and Medical (ISM) satellite receivers and broadband communications. 


  • Leveraging NXP's unique IP, product portfolio, processes and manufacturing capabilities, the design center will further enhance the position of NXP in these growing RF & Microwave markets.
  • With its East Coast location, and close proximity to design teams in France and the Netherlands, the center will also strengthen the technical and application support provided to the company's Americas-based customers.
  • Uniquely positioned in the RF & Microwave market with a rich portfolio of high-performance processes in-house, NXP's broad RF portfolio spans high-power LDMOS for power amplifiers to the latest SiGe:C BiCMOS for RF/IF MMICs. Additionally, advanced CMOS process for high-speed converters completes the RF front-end. As all these technologies are designed and manufactured in-house, they are custom-tuned to application-specific requirements. 
  • NXP also has a long history as one of the industry's leading compact model developers, so all technologies are supported by their associated, fully characterized RF models. This in-house process supports the company's global design teams in leading innovation and the development of products and solutions for some of the most pressing RF front-end challenges.

Supporting Quotes:

  • "This new product creation center builds upon NXP's 50-year heritage in RF innovation, further refining, localizing and extending that competence to meet customer demands and create innovative applications," said John Croteau, senior vice president and general manager of the High Performance RF and Lighting business lines at NXP Semiconductors. "Process, packaging and circuit design innovation remain pillars of our strategy, yielding leadership positions in technologies such as SiGe:C, LDMOS and JESD204A." 
  • "The deep pool of experienced and talented RF designers, the active RF customer base and the closeness to Europe make Boston the ideal location for the new NXP PCC," said Ian Gresham, general manager Boston PCC, NXP Semiconductors. "The PCC team will endeavour to push the limits of our high performance RF & Microwave products overcoming market challenges through innovation."


About NXP Semiconductors
NXP Semiconductors provides High Performance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power Management, Interface, Security and Digital Processing expertise. These innovations are used in a wide range of automotive, identification, wireless infrastructure, lighting, industrial, mobile, consumer and computing applications. Headquartered in Europe, the company has approximately 28,000 employees working in more than 25 countries and posted sales of USD 3.8 billion in 2009.

Forward-looking Statements
This release may contain certain forward-looking statements with respect to the financial condition, results of operations and business of NXP and certain plans and objectives of NXP with respect to these items. By their nature, forward-looking statements involve risk and uncertainty because they relate to events and depend on circumstances that will occur in the future and there are many factors that could cause actual results and developments to differ materially from those expressed or implied by these forward-looking statements.

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