SOURCE: Alliance Memory Inc.

Alliance Memory Inc.

November 03, 2014 11:00 ET

Alliance Memory Announces Product Lineup for electronica 2014

SAN CARLOS, CA--(Marketwired - Nov 3, 2014) - At electronica 2014, Alliance Memory will be highlighting its latest offering of legacy IC solutions, including high-speed CMOS synchronous DRAMs (SDRAMs) and mobile low-power double data rate (DDR), DDR2, and DDR3 SDRAMs featuring a wide range of densities, configurations, package options, and temperature ratings.

The devices provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions in industrial, medical, communications, and telecom products requiring high memory bandwidth, and they are particularly well-suited to high performance in PC applications.

Lead (Pb)- and halogen-free, all Alliance Memory products on display feature programmable read or write burst lengths. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, while a programmable mode register allows the system to choose the most suitable modes to maximize performance.

New Alliance Memory Products on Display at electronica 2014

512M Synchronous DRAM (SDRAM) Devices

Alliance Memory has partnered with Micron Semiconductor to supply and extend availability of support for three 512M synchronous DRAM (SDRAM) devices that Micron discontinued with Micron PCN #30995 (last-time buy: Feb. 28, 2014; last-time ship: Oct. 31, 2015). Alliance Memory will be offering Micron's 32M x 16 MT48LC32M16A2P-75: C (commercial temperature), 32M x 16 MT48LC32M16A2P-75 IT: C (industrial temperature), and 64M x 8 MT48LC64M8A2P-75: C. In addition to the Micron part numbers, Alliance Memory will offer Alliance-marked 512M SDRAMs manufactured by Micron which will be 100% identical to the Micron parts.

Mobile Low-Power DDRs
Alliance Memory's new mobile low-power DDRs are designed to increase efficiency and extend battery life in compact portable devices. Featuring low power consumption from 1.7 V to 1.95 V and a number of power-saving features, the 256-Mb, 512-Mb, 1-Gb, and 2-Gb devices are offered in 8-mm by 9-mm 60-ball and 8-mm by 13-mm 90-ball FPBGA packages.

High-Speed CMOS DDR3 Synchronous DRAMs (SDRAM)
Alliance Memory is introducing new high-speed CMOS double data rate 3 synchronous DRAMs DDR3 SDRAMs with high densities of 1 Gb, 2 Gb, and 4 Gb in 78-ball and 96-ball FBGA packages. Offering a wide variety of configurations -- including 128M x 8, 256M x 8, and 512M x 8 and 64M x 16, 128M x 16, and 256M x 16 -- with a synchronous interface, the devices are available in commercial (0 °C to +85 °C), industrial (-40 °C to +95 °C), and automotive (-40 °C to +105 °C) temperature ranges. Operating from a single +1.5-V power supply, the DDR3 SDRAMs feature a very fast clock rate of 800 MHz and data rate of 1600 Mbps/pin.

High-Speed CMOS Double Data Rate 2 Synchronous DRAMs (DDR2 SDRAMs)
DDR2 SDRAMs from Alliance Memory include devices with densities of 512 Mb, 1 Gb, and 2 Gb internally configured as four banks of 8M words x 16 bits, and eight banks of 8M x 16 bits and 16M x 8 bits. Offered in 60-ball 8-mm by 10-mm by 1.2-mm and 84-ball 8-mm by 12.5-mm by 1.2-mm FBGA packages, the DDR2 SDRAMs feature a synchronous interface, operate from a single +1.8-V (± 0.1 V) power supply, and feature a fast clock rate of 400 MHz and data rate of 800 Mbps/pin. The devices are available in commercial (0 °C to +85 °C), industrial (-40 °C to +95 °C), and automotive (-40 °C to +105 °C) temperature ranges.

High-Speed CMOS Double Data Rate Synchronous DRAMs (DDR1 SDRAM)
The latest high-speed CMOS double data rate synchronous DRAMs (DDR SDRAM) from Alliance Memory offer densities of 64 Mb, 128 Mb, 256 Mb, 512 Mb, and 1 Gb and an industrial temperature range of -40 °C to +85 °C. Internally configured as four banks of 1M, 2M, 4M, or 8M words x 16 bits with a synchronous interface, the devices operate from a single +2.5-V (± 0.2 V) power supply, feature a fast clock rate of 200 MHz, and are offered in the 66-pin TSOP II package with a 0.65-mm pin pitch and a 60-ball BGA.

High-Speed CMOS Synchronous DRAMs (SDRAM)
Alliance Memory has extended its offering of 64M, 128M, and 256M high-speed CMOS synchronous DRAMs (SDRAMs) with x32 devices in the 90-ball 8-mm by 13-mm by 1.2-mm TFBGA and 86-pin 400-mil plastic TSOP II packages. The 2M x 32, 4M x 32, and 8M x 32 devices feature fast access time from clock down to 5.4 ns and operate from a single +3.3-V (± 0.3 V) power supply. 256M SDRAMs offer a commercial temperature range of 0 °C to +70 °C and clock rate of 133 MHz, while the 64M and 128M devices feature an industrial temperature range from -40 °C to +85 °C with a higher clock rate of 166 MHz.

About Alliance Memory Inc.
Alliance Memory is a worldwide provider of legacy memory products for the communications, computing, consumer electronics, medical, automotive, and industrial markets. The company's product range includes a full range of asynchronous and synchronous SRAMs, low-power SRAMs, ZMD low-power SRAMs, 3.3 V synchronous DRAMs (SDR), mobile DDRs, and 2.5 V single (DDR1), 1.8 V double (DDR2), and 1.5 V & 1.35 V triple rate (DDR3) synchronous DRAMs. Depending on the family, these products are available with commercial, industrial, and automotive operating temperature ranges and with densities from 64K to 4G. Alliance Memory is a privately held company with headquarters in San Carlos, Calif., and regional offices in the United Kingdom, France, Italy, Sweden, Bulgaria, China, and Southeast Asia. More information about Alliance Memory is available online at www.alliancememory.com.

Contact Information

  • Agency Contact:
    Bob Decker
    Redpines
    +1 415 409 0233
    Email Contact

    Alliance Memory Contact:
    Kim Bagby
    CFO
    +1 650 610 6800
    Email Contact