SOURCE: Alliance Memory

Alliance Memory

April 27, 2011 11:00 ET

Alliance Memory Introduces New Line of High-Speed CMOS Synchronous DRAMs With 64-Mb, 128-Mb, and 256-Mb Densities in TSOP II Package

SAN CARLOS, CA--(Marketwire - Apr 27, 2011) - Alliance Memory, Inc., a worldwide provider of legacy memory ICs for the communications, computing, industrial, and consumer markets, today introduced a full line of new, high-speed CMOS synchronous DRAMs (SDR) with densities of 64 Mb (AS4C4M16S), 128 Mb (AS4C8M16S), and 256 Mb (AS4C16M16S).

The devices released today are optimized for industrial, communications, medical, and consumer products requiring high memory bandwidth, and are particularly well-suited to high-performance PC applications. Internally configured as four banks of 1M, 2M, or 4M word x 16 bits with a synchronous interface, the SDRs operate from a single +3.3-V (± 0.3V) power supply, and are lead (Pb) and halogen free.

Packaged in a 54-pin, 400-mil plastic TSOP II, the new SDRs offer a fast access time from clock down to 4.5 ns at a 5-ns clock cycle, and clock rates from 143 MHz to 200 MHz.

Alliance Memory's SDRs provide programmable read or write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, while a programmable mode register allows the system to choose the most suitable modes to maximize performance.

"As other suppliers are exiting the DRAM market to focus on new technologies, we remain committed to offering legacy parts to their customers, eliminating the need for costly redesigns of their end products," said Dan Gilbert, vice president of sales at Alliance Memory. "For these customers, it is imperative to have access to cost-effective drop-in replacement memory that is pin-for-pin compatible, and that is exactly what our new line of SDRs provides."

Device Specification Table:

Part numberAS4C4M16SAS4C8M16SAS4C16M16S
Density64 Mb128 Mb256 Mb
Configuration4M x 16 bit8M x 16 bit16M x 16 bit
Clock cycle (ns)6/76/75/6/7
Max. access time from clock (ns)5.4/5.45/5.44.5/5.4/5.4
Clock rate (MHz)166/143166/143200/166/143

Samples of the new SDRs are available now. Production quantities will be available on May 1 with lead times of six weeks. Pricing for U.S. delivery ranges from $0.90 to $1.80 in 1,000-piece quantities.

About Alliance Memory, Inc.
Alliance Memory, Inc. is a worldwide provider of legacy memory products for the communications, computing, industrial, and consumer markets. The company supports a full range of asynchronous and synchronous SRAMs, low-power SRAMs, and ZMD low-power SRAMs, along with an exciting new line-up of synchronous DRAMs (SDR). Alliance Memory is a privately held company with headquarters in San Carlos, California, and regional offices in Germany, France, and South East Asia. More information about Alliance Memory is available online at www.alliancememory.com.

Link to product datasheet:
http://www.alliancememory.com/products/synchDRAM.htm

Link to product photo:
http://www.flickr.com/photos/alliancememory/5653951565/

Contact Information

  • Agency Contact:
    Bob Decker
    Wall Street Communications
    +1 415 409 0233
    Email Contact

    Alliance Memory Contact:
    Kim Bagby
    CFO
    +1 650 610 6800
    Email Contact