SOURCE: Alliance Memory Inc.

Alliance Memory Inc.

July 14, 2015 11:00 ET

Alliance Memory Launches New Monolithic High-Speed, Low-Voltage CMOS DDR3L SDRAM With 8-Gb Density in 96-Ball FBGA Package

SAN CARLOS, CA--(Marketwired - Jul 14, 2015) - Alliance Memory today introduced a new monolithic high-speed, low-voltage CMOS double data rate 3 synchronous DRAM (DDR3L SDRAM) with an 8-Gb density in the 96-ball, 9-mm by 14-mm, lead (Pb)-free FBGA package. Featuring state-of-the art silicon provided by Micron Technology, Inc., the AS4C512M16D3L (512M x 16) offers a double data rate architecture for extremely fast transfer rates of up to 1600 Mbps/pin and clock rates of 800 MHz.

With minimal die shrinks, the single-die 8-Gb DDR3L SDRAM released today provides a reliable drop-in, pin-for-pin-compatible replacement for a number of similar solutions used in conjunction with newer-generation microprocessors for industrial, medical, networking, telecom, and aerospace applications -- eliminating the need for costly redesigns and part requalification. This 8-Gb DDR3 is a logical choice for customers that require increased memory yet face board space constraints.

The AS4C512M16D3L operates from a single +1.35-V power supply and is available with a commercial temperature range of 0 °C to +95 °C (AS4C512M16D3L-12BCN) and an industrial temperature range of -40 °C to +95 °C (AS4C512M16D3L-12BIN). The device is internally configured as eight banks of 512M x 16 bits.

The DDR3L SDRAM offers fully synchronous operation and provides programmable read or write burst lengths of 4 or 8. An auto precharge function provides a self-timed row precharge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, and a programmable mode register allows the system to choose the most suitable modes to maximize performance.

Samples of the new AS4C512M16D3L are available now, with lead times of six to eight weeks for production quantities.

About Alliance Memory Inc.
Alliance Memory is a worldwide provider of legacy memory products for the communications, computing, consumer electronics, medical, automotive, and industrial markets. The company's product range includes a full range of asynchronous and synchronous SRAMs, low-power SRAMs, ZMD low-power SRAMs, 3.3 V synchronous DRAMs (SDR), mobile DDRs, and 2.5 V single (DDR1), 1.8 V double (DDR2), and 1.5 V & 1.35 V triple rate (DDR3) synchronous DRAMs. Depending on the family, these products are available with commercial, industrial, and automotive operating temperature ranges and with densities from 64K to 8G. Alliance Memory is a privately held company with headquarters in San Carlos, California, and regional offices in the United Kingdom, France, Italy, Sweden, China, and Southeast Asia. More information about Alliance Memory is available online at www.alliancememory.com.

Micron and the Micron orbit logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners.

Link to product datasheet:
http://www.alliancememory.com/datasheets/AS4C512M16D3L.asp (AS4C512M16D3L)

Link to product photo:
https://www.flickr.com/photos/alliancememory/sets/72157653507544433

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