September 14, 2005 11:00 ET

Global Experts to Report on EUV Advances at November Symposium

AUSTIN, TX -- (MARKET WIRE) -- September 14, 2005 -- More than 250 international experts will meet to review the most recent breakthroughs in Extreme Ultraviolet Lithography (EUVL) during the Fourth International Symposium on EUVL to be held Nov. 7-9 at the Paradise Point Hotel in San Diego, California.

SEMATECH, in conjunction with Japan's Extreme Ultraviolet Lithography System Development Association (EUVA) and Association of Super-Advanced Electronics Technologies (ASET) and Europe's EUV Cluster Steering Council (CSC), will host the meeting at which approximately 50 oral papers and more than 100 posters will be presented.

Intel's Paolo Gargini, chairman of the International Technology Roadmap for Semiconductors (ITRS), will provide the keynote opening address with an industry perspective on device considerations for the implementation of EUVL, including a discussion of requirements for both memory and logic products. Also, authors of the following three invited papers will highlight the most significant recent developments in source, mask, and resist technology:

--  On Nov. 7, EUVA researchers will present results on a very high
    repetition rate CO2 laser produced plasma (LPP) EUV source. For EUV sources
    to be scaleable to the EUV powers needed for second- or third-generation
    full field EUV tools, it is critical to understand if LPP sources will be
    commercially viable. CO2-based LPP sources are increasingly seen as the
    most promising way to achieve this goal.
--  Nov. 8, engineers of the Advanced Mask Technology Center (AMTC) in
    Dresden, Germany, will report on the integrated mask process of AMTC's mask
    pilot line, which was established as part of Europe's EUV effort. As full-
    field exposure tools become available, the commercial availability of EUV
    masks is critical to early users of the technology.
--  Nov. 9, researchers from the University at Albany (SUNY), will discuss
    the current resolution limits of advanced EUV. Increased attention is being
    focused on EUV resist development as the resolution of EUV optics outpaces
    the resolution capability of photoresists.
The remaining oral and poster presentations will be organized in sessions covering exposure tools, sources, mask technology, optics performance, resists, and metrology. Some of the papers from these sessions include:
--  Exposure tools -- ASML, Canon, and Nikon will discuss the status of
    their EUV tool development programs and the supporting infrastructure. ASML
    and Nikon will reveal the integration results of their full-field EUV alpha
    tools, and Canon will report on development of a new small field exposure
    system (SFET).
--  Sources -- Source suppliers will address the commercial readiness of
    EUV sources with respect to beta and high-volume manufacturing (HVM)
--  Masks -- The latest progress will be shown toward achieving zero
    defect mask blanks, defect-free EUV mask handling, and mask blank/patterned
    mask inspection.
--  Optics -- Key topics will include EUV optics manufacturing capability,
    scalability of EUVL optics beyond numerical aperture (NA) of 0.25, and
    progress in understanding EUV optics degradation mechanisms and capping
--  Resist -- A comprehensive overview will be given of today's EUV resist
    performance with respect to meeting the primary challenge for EUVL:
    simultaneously meeting requirements for photosensitivity, resolution, and
    line edge roughness (LER).
--  Metrology -- Topics will include high-precision metrology for mask and
    resist development.
Further details and registration information for the Symposium are available at, or contact Darlyne Harlan, 512-356-3927.

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