Custom MMIC

April 13, 2012 10:41 ET

Ka-Band LNA MMIC Offers 1.7 dB Noise Figure and Low Power Dissipation

WESTFORD, MA--(Marketwire - Apr 13, 2012) - Custom MMIC (, a developer of performance driven monolithic microwave integrated circuits (MMICs), is offering a new device from its growing MMIC design library. The CMD162 is a GaAs MMIC low-noise amplifier (LNA) chip for applications from 26 to 34 GHz. Optimized for 30 GHz satellite communications, the CMD162 boasts a typical noise figure of 1.7 dB with a small-signal gain of 22 dB and an output 1 dB compression point of +7 dB. This amplifier delivers high performance with high efficiency, reducing typical industry DC power dissipation for a device in this frequency band from approximately 340 mW down to 50 mW.

The CMD162 also offers subsystem and device designers a key cost reduction attribute. Implementation is simplified since the device only requires positive drain and gate voltages of +2 V, thereby eliminating the negative voltages and sequencer circuits commonly associated with LNAs in this frequency range. The CMD162 can be biased with a drain voltage ranging from +1 to +4 V and a gate voltage ranging from 0 to +3 V.

The amplifier die measures 2.3 x 1.3 mm, includes gold backside metallization, and has full nitride passivation for increased reliability and moisture protection. It can handle input signal levels to +20 dBm. The GaAs MMIC amplifier has typical input return loss of 18 dB and typical output return loss of 20 dB, both at 30 GHz. It is a much smaller, lower-cost alternative to hybrid LNAs for this frequency range, and is uniquely suited for both narrowband and broadband applications requiring small size and low current consumption, including phased-array radar and point-to-point microwave radio systems.

For a full datasheet on the CMD162 GaAs MMIC LNA, visit:

About Custom MMIC
Custom MMIC represents a new way of thinking about MMICs. Driven by customer challenges, the company offers both hands-on design through testing services, and a growing library of system ready designs. They are experienced in GaAs, GaN, SiC, InP, and InGaP HBT and have established relationships with the leading foundries in these technologies. They specialize in RF through millimeter-wave circuits for satellite communications, radar systems, cellular infrastructure, consumer electronics, VSAT, and point-to-point radio systems. For more information, visit

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