SOURCE: NXP Semiconductors

NXP Semiconductors

September 23, 2010 04:00 ET

NXP Announces LDMOS UHF Transistor With DVB-T Output Power of 120W

NXP BLF888A Enables Powerful, Efficient Digital Broadcast Transmitters

EINDHOVEN, THE NETHERLANDS--(Marketwire - September 23, 2010) -  NXP Semiconductors N.V. (NASDAQ: NXPI) today announced the availability of an Ultra High Frequency (UHF) RF power transistor; the BLF888A, a 600W LDMOS device for broadcast transmitters and industrial applications. The BLF888A is the most powerful LDMOS broadcast transistor in the market to date. For a DVB-T signal over the full UHF band from 470 to 860MHz, the transistor can deliver 120W average power with efficiencies greater than 31 percent. Featuring excellent linearity, high gain of 21dB and outstanding ruggedness corresponding to VSWR greater than 40:1, the BLF888A is ideal for advanced digital transmitter applications, such as DVB-T. The BLF888A will be showcased at the European Microwave Week, NXP Booth No. 194, from September 26 - October 1, 2010 in Paris.

The exceptional performance of the BLF888A is enabled by NXP's 50V high voltage LDMOS process technology in combination with advanced thermal concepts, resulting in unprecedented power density and thermal resistance as low as 0.15K/W. As a consequence, the BLF888A allows broadcast equipment manufacturers to optimize existing or new transmitter installations for performance and total cost of ownership. For complete power amplifier line-ups, the BLF888A combines optimally with the BLF881 driver transistor.

"We have achieved something very special with the BLF888A, by being able to combine excellent ruggedness with broadband power and efficiency," said Mark Murphy, director of marketing for RF power products, NXP Semiconductors. "In the past, designers would have had to trade these parameters off against each other, yielding a sub-optimal solution. Now with the BLF888A, broadcast transmitter architects around the world have the option to optimize the RF system level performance without having to worry about the power transistor."

The new transistor is available in two versions: a bolt-down package -- BLF888A and an earless package -- BLF888AS, which enables a more compact PCB design. The BLF888AS can be soldered to achieve a further decrease in junction temperature.

With more than 4 billion RF products shipped annually, NXP is an industry leader in High Performance RF. NXP's leading LDMOS technologies together with advanced package concepts enables best-in-class RF power transistor performance, featuring high power and outstanding ruggedness for all broadcast technologies.

The BLF888A and BLF888AS are sampling now.
For more information on BLF888A(S), visit
For more information on NXP's high performance RF products, visit

About NXP Semiconductors
NXP Semiconductors N.V. (NASDAQ: NXPI) provides High Performance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power Management, Interface, Security and Digital Processing expertise. These innovations are used in a wide range of automotive, identification, wireless infrastructure, lighting, industrial, mobile, consumer and computing applications. Headquartered in Europe, the company has approximately 28,000 employees working in more than 25 countries and posted sales of USD 3.8 billion in 2009. For more information, visit

Forward-looking Statements
This release may contain certain forward-looking statements with respect to the financial condition, results of operations and business of NXP and certain plans and objectives of NXP with respect to these items. By their nature, forward-looking statements involve risk and uncertainty because they relate to events and depend on circumstances that will occur in the future and there are many factors that could cause actual results and developments to differ materially from those expressed or implied by these forward-looking statements.