SOURCE: Ramtron International Corporation

Ramtron International Corporation

June 30, 2009 10:30 ET

Ramtron Announces 8-Megabit Parallel Nonvolatile F-RAM Memory

Space Efficient Ball Grid Array Package Offers Pin-Compatible Upgrade Path for F-RAM

COLORADO SPRINGS, CO--(Marketwire - June 30, 2009) - Ramtron International Corporation (NASDAQ: RMTR), the leading developer and supplier of nonvolatile ferroelectric random access memory (F-RAM) and integrated semiconductor products, today announced the availability of its 8-Megabit (Mb) F-RAM memory in a streamlined FBGA package. The FM23MLD16 is an 8-Mbit, 3-volt, parallel nonvolatile RAM in a 48-pin Fine-Pitch Ball Grid Array (FBGA) package that features fast access, virtually unlimited read/write cycles and low power consumption. Pin-compatible with asynchronous static RAM (SRAM), the FM23MLD16 targets industrial control systems such as robotics, network RAID storage solutions, multi-function printers, auto navigation systems, and a host of other SRAM-based system designs.

"The 8-Mbit F-RAM parallel memory and our recently released 4-Mbit FM22LD16 are designed to meet customer demand for higher density memory for write-intensive data collection applications," remarks Mike Peters, Ramtron marketing manager. "Both products are pin-compatible, enabling an easy density upgrade. The FM23MLD16 allows system designers eight times the F-RAM density in an equivalent TSOP32 package footprint," adds Peters.

Product Features

The FM23MLD16 is organized as a 512K x 16 nonvolatile memory, accessed with an industry standard parallel interface. Access time is 60ns and cycle time is 115ns. The device reads and writes at bus speed for NoDelay™ writes with endurance of at least 1E14 (100-trillion) writes and 10-year data retention.

The FM23MLD16 offers superior performance over battery-backed SRAM (BBSRAM), as it does not require a battery for data backup. The FM23MLD16 is a true surface-mount solution, requiring no rework steps for battery attachment and, unlike battery-backed SRAM, is highly resistant to moisture, shock and vibration, making F-RAM ideal for harsh industrial applications. The FM23MLD16 includes a low voltage monitor that blocks access to the memory array when supply voltage drops below a critical threshold. The memory is protected against an inadvertent access and data corruption under this condition.

With a convenient interface to current high-performance microprocessors, the FM23MLD16 features a high-speed page mode that enables 8-byte burst read/write operations at up to 33MHz. The device draws 9 milliamps for reads/writes and a typical standby current of 180 microamps. It operates from 2.7 to 3.6 volts over the industrial temperature range (-40 degrees C to +85 degrees C).

Pricing and Availability

Samples of the FM23MLD16 are available now in a 48-pin FBGA package that is RoHS-compatible. Pricing is $29.23 in quantities of 10K.

About Ramtron

Ramtron International Corporation, headquartered in Colorado Springs, Colorado, is a fabless semiconductor company that designs, develops and markets specialized semiconductor memory and integrated semiconductor solutions used in a wide range of product applications and markets worldwide. For more information, visit www.ramtron.com. For a 300-dpi product photo, visit, www.ramtron.com/press-center/image-bank.aspx (see Parallel Product Photos).

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