Semiconductor Insights inc.

Semiconductor Insights inc.

October 20, 2005 07:00 ET

Samsung 73nm NAND Flash Recognized as Most Innovative Process

OTTAWA, ONTARIO--(CCNMatthews - Oct. 20, 2005) - Semiconductor Insights (SI), the leader in technical and patent analyses of integrated circuits and electronic systems, today announced that it has awarded Samsung's 73nm NAND Flash the 2005 INSIGHT Award for Most Innovative Process. "DRAM no longer leads the roadmap for lithographies and feature size", said Edward Keyes, Vice President and CTO for SI. "Samsung's launch of a flash memory at the 70nm technology node marks the first time that DRAM has been surpassed as the device type with the smallest feature size."

NAND Flash is gaining increased traction as a high volume storage solution. With the introduction of larger capacity devices at smaller process nodes, portable devices are rivaling their larger counterparts. NAND flash has even been proposed as a solution for non-portable consumer products, such as computer hard drive storage.

Recent SI analysis of available technologies positions Samsung as the process leader. "Samsung's Flash strategy", stated Keyes, "is clearly to aggressively pursue scaling to achieve high density and small die size rather than multi bit per cell technology."

Additional Information:

- Image - Samsung's 73nm 4Gb NAND Flash

(http://www.semiconductor.com/insightawards/images/samsung_die_photo2.jpg)

- About Samsung's 73nm 4Gb NAND Flash

(http://www.semiconductor.com/resources/reports_database/view_device.asp?sinumber=12842)

- EETimes Article "Samsung 73nm"

(http://www.eetimes.com/news/latest/showArticle.jhtml?articleID=172300901)

- About the INSIGHT Awards

(http://www.semiconductor.com/insightawards/index.asp)

- About Semiconductor Insights

(http://www.semiconductor.com/about_si/index.asp)

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