September 15, 2005 11:00 ET

SEMATECH Hosting Advanced Gate Stack Symposium With Focus on 45 nm Technology and Beyond

AUSTIN, TX -- (MARKET WIRE) -- September 15, 2005 -- An in-depth exploration of high-k dielectric and metal gate issues for the 45 nm technology generation and beyond will be the focus of the 2nd International Symposium on Advanced Gate Stack Technology, hosted by SEMATECH Sept. 26-28 at the Omni Austin Hotel Downtown.

The 2 1/2-day event, co-sponsored by IEEE and the Electron Devices Society, will include researchers and invited speakers representing leading semiconductor companies, consortia, and universities. Key topics will include electrode and dielectric issues, reliability, and integration. Attendees representing chip-makers, semiconductor equipment manufacturers, and academic institutions are expected.

"The AGS Symposium is a unique and focused opportunity for leading experts in the field of gate stack technology to interact with each other," said Byoung Hun Lee, manager of SEMATECH's Advanced Gate Stack Program. "Our discussions will center on the progress and remaining technical challenges in high-k/metal gate stack implementation."

A total of six sessions of three hours each will address such front-end issues as:

--  Defining and measuring workfunction
--  Leading candidates for band-edge metal electrodes
--  Remaining challenges in high-k dielectrics
--  Processes in understanding bias-temperature instability (BTI) test
--  Materials-process-integration implications for reliability of
    metal/high-k gate stacks
--  Key process/integration challenges to implementing metal/high-k gates
Additional program and registration information is available at

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