Semiconductor Insights inc.

Semiconductor Insights inc.

March 15, 2007 08:05 ET

Semiconductor Insights Finds Intel Uses Thinnest Gate Dielectric at 65nm

OTTAWA, ONTARIO--(CCNMatthews - March 15, 2007) - Semiconductor Insights (SI) has completed a comparative analysis of the structural and chemical composition of leading edge 65nm logic semiconductor devices. Four devices from top semiconductor manufacturers were selected for the comparison; the latest high-performance processors from both Intel and AMD, a low standby power baseband processor from Texas Instruments, as well as a field programmable gate array designed by Xilinx and manufactured by UMC. Detailed compositional analysis of gate dielectrics used in production IC's provides previously unavailable insights into this critical area of semiconductor technology. And SI's analysis marks the first time ever that High Resolution TEM imaging and EELS materials analysis have been used to study one of the most challenging steps in semiconductor manufacturing.

The analysis found that all of the devices use an ultrathin silicon oxynitride gate dielectric. More interestingly, Intel's device uses the thinnest gate dielectric. Texas Instruments is the thickest, but also has the lowest nitrogen content. The key take away from this analysis is that there is a critical need to reduce the tunneling current in the thinnest dielectric films.

Further details about the importance of gate dielectrics can be found on SI's blog (

The following 65nm studies are available for purchase now from Semiconductor Insights:

- Gate Dielectric Composition Analysis of Leading Edge 65nm Logic Processes

- AMD HP 65nm SOI

- Intel HP 65nm

- Texas Instruments LSTP 65nm

- Xilinx UMC HP 65nm

About Semiconductor Insights

Contact Information

  • Semiconductor Insights
    Jill Perry
    613-599-6500 x 4444