September 06, 2007 15:06 ET

TDI Announces Production of 100 mm GaN and AlN epi Products

SILVER SPRING, MD--(Marketwire - September 6, 2007) - Technologies and Devices International, Inc. (TDI), the leading developer and supplier of compound nitride semiconductor materials, announced today that its 4-inch (100 mm) GaN and AlN epitaxial wafers are now in production and being shipped to customers. These wafers are manufactured by TDI's proprietary patented hydride vapor phase epitaxial (HVPE) process and multi-wafer equipment at the company facility at Silver Spring, MD.

The GaN wafers consist of 7 - 12 microns thick GaN layer deposited on (0001) c-plane 4-inch sapphire substrates. The target applications of these wafers are low-defect substrates for manufacturing of advanced blue, green and white GaN-based light emitting diodes (LEDs).

The AlN wafers consist of 10 - 30 microns thick electrically insulating AlN layer deposited on (0001) 4-inch silicon carbide (SiC) substrates. The target applications of these wafers are low defect electrically insulating substrates for development and production of high power AlGaN-based high electron mobility transistors (HEMTs).

"There is a clear trend in the industry to develop and commercialize GaN-based devices on large substrates. TDI customers are rapidly moving from the industry standard 2-inch epitaxial wafers to 3-inch and now to 4-inch wafers. TDI has successfully expanded its manufacturing facility and deposition equipment to start volume production of 4-inch (100 mm) GaN and AlN epitaxial products," said Vladimir Dmitriev, president and CEO of TDI. "While TDI has a leadership position on 100 mm GaN and AlN HVPE process and equipment, it is also on track to begin production of 6-inch epitaxial products in 2008. Volume production of large area low-cost GaN and AlN substrates will tremendously benefit our customers in terms of device throughput, material yield, and reduced production cost."

About TDI

The company is a privately owned developer and manufacturer of novel compound semiconductors including GaN, AlN, AlGaN, InN, and InGaN. TDI has developed and commercialized a variety of compound semiconductor materials, primarily for applications in solid state lighting, short wavelength optoelectronics and RF power electronics. For novel development results and TDI's product list please visit

Contact Information

  • For more information, contact:
    TDI, Inc.
    12214 Plum Orchard Drive
    Silver Spring, MD 20904, USA
    Phone: 1 301 572 7834
    FAX: 1 301 572 6435
    Email: Email Contact