SOURCE: TDI, Inc

November 21, 2007 14:00 ET

TDI Awarded Patent for HVPE Equipment to Make Low-Cost Bulk GaN and AlGaN Substrates

SILVER SPRING, MD--(Marketwire - November 21, 2007) - Technologies and Devices International, Inc. (TDI), a privately held Maryland corporation, announced today that it has been awarded a United States Patent, US 7,279,047 B2, the latest in a series of patents that cover new and innovative production equipment for the manufacturing of low-defect nitride semiconductor materials, particularly bulk gallium nitride (GaN) and aluminum gallium nitride (AlGaN) substrates. The new patent, titled "Reactor for extended duration growth of gallium containing single crystals," pertains to a crystal growth machine for the fabrication of GaN and AlGaN single crystal materials using a modified hydride vapor phase epitaxial (HVPE) process. This new production tool allows long lasting high growth rate process for high quality GaN and AlGaN single crystal materials. GaN substrates are required for the fabrication of high performance blue and green light emitting diodes (LEDs) and laser diodes (LDs), while AlGaN substrates are needed for optoelectronic devices operating in ultra violet (UV) optical spectral region.

"I am excited to see our intellectual property expanded by this new patent," says Vladimir Dmitriev, President and CEO of TDI. "This equipment will enable significant improvements in quality, stability and efficiency of crystal growth technology. It will be applied to fabrication of a variety of products including multi-wafer manufacturing of free-standing and bulk GaN substrates, particularly for Solid State Lighting applications. Fabrication of low-cost low-defect GaN substrates is the key for rapid penetration of Solid State Lighting in the Global lighting market."

The patent adds to TDI's intellectual property portfolio which includes more than 30 issued and pending US and international patents and covers crystal growth methods, growth equipment, and materials invented at TDI for various compound semiconductor materials as well as various epitaxial device structures.

About TDI

The company is a privately owned developer and manufacturer of novel compound semiconductors including GaN, AlN, AlGaN, InN, and InGaN. TDI has developed and commercialized a variety of compound semiconductor materials, primarily for applications in solid-state lighting, short wavelength optoelectronics and RF power electronics. For novel development results and TDI's product list please visit www.tdii.com.

Contact Information

  • For more information, contact:
    TDI, Inc.
    12214 Plum Orchard Drive
    Silver Spring, MD 20904, USA
    Phone: 1 301 572 7834
    FAX: 1 301 572 6435
    Email: Email Contact
    www.tdii.com