SOURCE: Technologies and Devices International, Inc.

August 15, 2005 08:00 ET

TDI Releases Semi-Insulating Substrates for AlGaN/GaN HEMTs

SILVER SPRING, MD -- (MARKET WIRE) -- August 15, 2005 -- Technologies and Devices International, Inc. (TDI), a privately held Maryland corporation, today announced the availability of novel 3-inch in diameter semi insulating substrate materials for nitride-based semiconductor devices. The group-III nitride compound semiconductor material family includes gallium nitride (GaN), aluminum nitride (AlN), and their alloys. The GaN-based market is projected at least $5B for 2007 and more than $7B for 2009.

The product consists of 10 - 18 micron thick single crystal AlN film deposited on a conductive silicon carbide (SiC) substrate. The product is targeted substrate applications for ultra high power AlGaN/GaN high electron mobility transistors (HEMTs) and was positively tested at customers (see for more details www.tdii.com) enabling dramatic cost reduction of final devices. Other target applications include high power blue and ultra violet (UV) light emitters, light emitting diodes (LEDs) and laser diodes (LDs).

Novel low defect AlN/SiC substrates have very good lattice and thermal match to GaN-based devices and combine the unique thermal conductivity of SiC and exceptionally high intrinsic electrical resistivity of AlN. Thickness of AlN is sufficient to provide reliable insulation and low current leakage for HEMT devices. At a fraction of the price of semi insulating SiC, this novel product is an excellent, cost-effective substrate for a variety of nitride semiconductor devices.

"Substrate related issues in nitride electronics are well known. Due to lack of native AlN and GaN substrates, nitride devices are fabricated on foreign substrates, which are not lattice and thermally matched to the device structures, limiting their performance, reliability, and causing device degradation. Proprietary stress-control technology developed at TDI allows us to put in production these new substrate materials, which will allow the nitride community to speed up development and commercialization of advanced nitride semiconductor devices," stated Vladimir Dmitriev, President and CEO of TDI.

Nitride semiconductors are used for fabrication of a new generation of electronic devices such as HEMTs for advanced wireless communications, and novel optoelectronic devices such as blue and UV LEDs and LDs, and UV photodetectors for applications in cellular phones, giant displays, solid state lighting and ultra large capacity optical storage systems, and variety of military applications.

About TDI

The company is a privately owned developer and manufacturer of novel compound semiconductors including GaN, AlN, and AlGaN. TDI is developing various compound semiconductor materials and devices, primarily for applications in short wavelength optoelectronics and RF power electronics.

Contact Information

  • Company: TDI, Inc.
    Phone: 301-572-7834
    Fax: 301-572-6435
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