SOURCE: Varian Semiconductor

October 26, 2006 09:20 ET

Varian Semiconductor Receives Follow-On Orders From Major Korean Memory Chipmaker for Its VIISta® PLAD Plasma Doping System

GLOUCESTER, MA -- (MARKET WIRE) -- October 26, 2006 -- Varian Semiconductor Equipment Associates, Inc. (NASDAQ: VSEA) today announced that it has received follow-on orders for its VIISta® PLAD plasma doping system from an industry-leading DRAM and flash memory manufacturer. The customer qualified VIISta PLAD for its Dual Poly Gate (DPG) process after extensive in-house tests to confirm electrical yield and device reliability performance. The tools are expected to ship this quarter into 300mm mass production fabs.

"Our PLAD tools were selected for this critical application based on the unique ability to meet the yield goals, and the reliability and productivity needed for high-volume manufacturing," said Gary Dickerson, Chief Executive Officer of Varian Semiconductor. "Dual Poly Gate is a new DRAM process that requires a dose many times higher than previous DRAM steps. We are pleased that our PLAD tools, specifically designed to meet the demanding yield and productivity requirements for DPG, have enabled this customer to move this process into mass production."

Varian Semiconductor's products are used by chip manufacturers worldwide to produce high-performance semiconductor devices. The VIISta platform is the only complete production-proven suite of single wafer solutions for all medium current, high current and high energy applications. All of the VIISta products feature the Varian Control System (VCS™) and a common single wafer endstation. This high degree of commonality across the VIISta platform provides flexibility in managing capacity, product mix changes, spare parts and training.

About VIISta PLAD

The VIISta PLAD is a multi-chamber tool built on a platform common with Varian Semiconductor's VIISta family of implanters, the only truly complete platform available that covers all implant segments. The VIISta PLAD implants the entire wafer simultaneously by positioning the wafer directly in a chamber containing plasma of the desired species. A pulsed DC voltage applied to the wafer draws ions from the plasma at a precisely controlled energy, resulting in extremely fast high-dose implants without energy contamination that can destroy sensitive transistors. Pulsing the bias voltage allows the system to automatically neutralize any charge buildup on the wafer surface between pulses and measure the ion dose per pulse using a Faraday for closed-loop in-situ dose control. With throughput up to six times greater than beamline or modified-source beamline technologies, the VIISta PLAD has become the tool of choice for critical low-energy, high-dose applications, such as DRAM polysilicon gate doping.

About Varian Semiconductor

Varian Semiconductor Equipment Associates, Inc. is the leading supplier of ion implant equipment to semiconductor manufacturers, enabling them to pack more, higher performing transistors into computer chips that are revolutionizing the electronics industry. Customers have made Varian Semiconductor the market leader in ion implant because of its architecturally superior products that lower their costs and improve their productivity. The Company has ranked #1 in the VLSI Research Customer Satisfaction Survey nine times over the last 10 years. Varian Semiconductor operates globally and is headquartered in Gloucester, Massachusetts. More information can be found on Varian Semiconductor's web site at www.vsea.com.

Note: This release contains forward-looking statements for purposes of the safe harbor provisions under The Private Securities Litigation Reform Act of 1995. For this purpose, the statements concerning the Company's performance, market share and technology leadership, technological capabilities and benefits and growth are forward-looking statements and any statements using the terms "believes," "anticipates," "expects," "plans," or similar expressions are forward-looking statements. There are a number of important risks and factors that could cause actual events to differ materially from those suggested or indicated by such forward-looking statements. These include, among others, volatility in the semiconductor equipment industry; economic conditions in general and as they affect the Company's customers; significant fluctuations in the Company's quarterly operating results; the impact of rapid technological change; the Company's dependence on the development and introduction of new products; the Company's concentration on ion implantation systems and related products; concentration in the Company's customer base and lengthy sales cycles; the highly competitive market in which the Company competes; risks of international sales; foreign currency risks; and other factors identified in the Company's Annual Report on Form 10-K, and the most recent Quarterly Reports on Form 10-Q filed with the Securities and Exchange Commission. The Company cannot guarantee any future results, levels of activity, performance or achievement. The Company undertakes no obligation to update any of the forward-looking statements after the date of this press release.

Contact Information

  • Contacts:
    Bob Halliday
    Executive Vice President
    Chief Financial Officer
    978.282.7597
    or
    Mary Wright
    Director, Investor Relations
    978.282.5859