SOURCE: Vishay Intertechnology, Inc.

Vishay Intertechnology, Inc.

August 15, 2011 11:00 ET

Vishay Siliconix 8 V P-Channel TrenchFET® Power MOSFET Offers Industry's Lowest On-Resistance Down to 34 Milliohms at 4.5 V in the 1.6 mm by 1.6 mm Footprint Area With Sub-0.8-mm Profile

SiB437EDKT Features On-Resistance Ratings Down to 1.2 V for Lower-Voltage Handheld Electronics

MALVERN, PA--(Marketwire - Aug 15, 2011) - Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new 8 V p-channel TrenchFET® power MOSFET featuring the industry's lowest on-resistance for a p-channel device in the 1.6 mm by 1.6 mm footprint area with a profile under 0.8 mm. In addition, the SiB437EDKT is the only such device to offer an on-resistance rating down to 1.2 V.

The new SiB437EDKT will be used for load switching in handheld devices such as smart phones, MP3 players, portable media players, digital cameras, eBooks, and tablet PCs. The compact footprint and ultra-thin 0.65 mm maximum profile of the device's thermally enhanced Thin PowerPAK® SC-75 package enable smaller, slimmer end products, while its low on-resistance translates into lower conduction losses, saving power and maximizing battery run times in these devices.

The MOSFET's on-resistance ratings of 1.5 V and 1.2 V allow the device to work with the lower-voltage gate drives and lower bus voltages common in handheld devices, without the space and cost of level-shifting circuitry. The MOSFET is particularly useful when the battery charge in a handheld device is low and needs to consume as little power as possible.

The SiB437EDKT offers an ultra-low on-resistance of 34 milliohms at 4.5 V, 63 milliohms at 1.8 V, 84 milliohms at 1.5 V, and 180 milliohms at 1.2 V. The closest competing p-channel devices in the 1.6 mm by 1.6 mm footprint area with a sub-0.8 mm profile feature on-resistance of 37 milliohms at 4.5 V, 65 milliohms at 1.8 V, and 100 milliohms at 1.5 V. These values are 8 %, 5 %, and 16 % higher, respectively, than the SiB437EDKT.

100 % Rg tested, the SiB437EDKT is halogen-free in accordance with the IEC 61249-2-21 definition and compliant to RoHS Directive 2002/95/EC. The MOSFET offers typical ESD protection of 2000 V.

Samples and production quantities of the new SiB437EDKT TrenchFET power MOSFET are available now, with lead times of 12 to 14 weeks for larger orders. Follow TrenchFET power MOSFETs at http://twitter.com/vishayindust.

Vishay Intertechnology, Inc., a Fortune 1,000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay's product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at www.vishay.com.

TrenchFET and PowerPAK are registered trademarks of Siliconix incorporated.

Link to datasheet:
http://www.vishay.com/doc?67402 (SiB437EDKT)

Link to product photo:
http://www.flickr.com/photos/vishay/6030250125