SOURCE: Vishay Intertechnology, Inc.

Vishay Intertechnology, Inc.

February 28, 2011 11:00 ET

Vishay Siliconix Releases 30 V N-Channel and 20 V P-Channel TrenchFET® Power MOSFETs in Compact Thin PowerPAK® SC-70 Package With Ultra-Slim 0.6 mm Profile

SiA444DJT Offers Lowest Profile for an N-Channel MOSFET in the 2 mm by 2 mm Footprint Area; SiA429DJT Features Lowest On-Resistance for a Sub-0.8 mm P-Channel Device

MALVERN, PA--(Marketwire - February 28, 2011) - Vishay Intertechnology, Inc. (NYSE: VSH) today introduced new 30 V n-channel and 20 V p-channel TrenchFET® power MOSFETs in the thermally enhanced Thin PowerPAK® SC-70 package with an ultra-low 0.6 mm profile. The new SiA444DJT features the industry's lowest profile for an n-channel MOSFET in the 2 mm by 2 mm footprint area, while the SiA429DJT offers the industry's lowest on-resistance for a p-channel device with a sub-0.8 mm profile.

For handheld devices requiring an n-channel MOSFET that is thinner than the standard 0.8 mm, the SiA444DJT's 0.6 mm profile is 13 % less than the next-thinnest 2 mm by 2 mm device and 19 % less than the standard 0.8 mm height. In addition, the MOSFET offers low on-resistance of 17 milliohms at 10 V and 22 milliohms at 4.5 V, and the lowest maximum on-resistance multiplied by gate charge product -- a key figure of merit (FOM) for MOSFETs in DC/DC converter applications -- of 170 milliohms-nC at 10 V and 110 milliohms-nC at 4.5 V.

If a thinner p-channel is needed, the SiA429DJT provides the lowest on-resistance of 20.5 milliohms at 4.5 V, 27 milliohms at 2.5 V, 36 milliohms at 1.8 V, and 60 milliohms at 1.5 V. The device's on-resistance at 1.8 V is 12 % lower than the closest competing device, including MOSFETs with the standard 0.8 mm profile and all 2 mm by 2 mm p-channel MOSFETs. For handheld electronics, the lower on-resistance of the SiA429DJT and SiA444DJT translates into lower conduction losses, thus prolonging battery life between charges.

The ultra-slim Thin PowerPAK SC-70 package of the SiA444DJT and SiA429DJT is optimized for small handheld electronics, including cell phones, smartphones, MP3 players, digital cameras, eBooks, and tablet PCs. In these devices, the SiA444DJT will be used for high-frequency DC/DC converters, while the SiA429DJT is ideal as a load switch or charger switch and can also be used as a high-side switch in DC/DC buck converter applications.

The MOSFETs are 100 % Rg tested and are halogen-free in accordance with IEC 61249-2-21 and compliant to RoHS directive 2002/95/EC.

Samples and production quantities of the new SiA444DJT and SiA429DJT TrenchFET power MOSFETs are available now, with lead times of 12 to 14 weeks for larger orders. Follow TrenchFET power MOSFETs at

Vishay Intertechnology, Inc., a Fortune 1,000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay's product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at

TrenchFET and PowerPAK are registered trademarks of Siliconix incorporated.

Link to datasheets: (SiA444DJT) (SiA429DJT)

Link to product photo: